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  1/8 july 2001 n high speed: t pd = 5.0ns (typ.) at v cc =5v n low power dissipation: i cc =2 m a(max.) at t a =25 c n compatible with ttl outputs v ih = 2v (min.), v il = 0.8v (max.) n 50 w transmission line driving capability n symmetrical output impedance: |i oh |=i ol = 24ma (min) n balanced propagation delays: t plh @ t phl n operating voltage range: v cc (opr) = 4.5v to 5.5v n pin and function compatible with 74 series 04 n improved latch-up immunity description the 74act04 is an advanced high-speed cmos hex inverter fabricated with sub-micron silicon gate and double-layer metal wiring c 2 mos technology. the internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. the device is designed to interface directly high speed cmos systems with ttl, nmos and cmos output voltage levels. all inputs and outputs are equipped with protection circuits against static discharge, giving them 2kv esd immunity and transient excess voltage. 74act04 hex inverter pin connection and iec logic symbols order codes package tube t & r dip 74ACT04B sop 74act04m 74act04mtr tssop 74act04ttr tssop dip sop
74act04 2/8 input and output equivalent circuit pin description truth table absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. recommended operating conditions 1) v in from 0.8v to 2.0v pin no symbol name and function 1, 3, 5, 9, 11, 13 1a to 6a data inputs 2, 4, 6, 8, 10, 12 1y to 6y data outputs 7 gnd ground (0v) 14 v cc positive supply voltage ay lh hl symbol parameter value unit v cc supply voltage -0.5 to +7 v v i dc input voltage -0.5 to v cc + 0.5 v v o dc output voltage -0.5 to v cc + 0.5 v i ik dc input diode current 20 ma i ok dc output diode current 20 ma i o dc output current 50 ma i cc or i gnd dc v cc or ground current 200 ma t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 300 c symbol parameter value unit v cc supply voltage 4.5 to 5.5 v v i input voltage 0 to v cc v v o output voltage 0 to v cc v t op operating temperature -55 to 125 c dt/dv input rise and fall time v cc = 4.5 to 5.5v (note 1) 8 ns/v
74act04 3/8 dc specifications 1) maximum test duration 2ms, one output loaded at time 2) incident wave switching is guaranteed on transmission lines with impedances as low as 50 w ac electrical characteristics (c l = 50 pf, r l = 500 w , input t r =t f = 3ns) (*) voltage range is 5.0v 0.5v capacitive characteristics 1) c pd is defined as the value of the ic's internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operating current can be obtained by the following equation. i cc(opr) =c pd xv cc xf in +i cc /6 (per gate) symbol parameter test condition value unit v cc (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. v ih high level input voltage 4.5 v o = 0.1 v or v cc -0.1v 2.0 1.5 2.0 2.0 v 5.5 2.0 1.5 2.0 2.0 v il low level input voltage 4.5 v o = 0.1 v or v cc -0.1v 1.5 0.8 0.8 0.8 5.5 1.5 0.8 0.8 0.8 v v oh high level output voltage 4.5 i o =-50 m a 4.4 4.49 4.4 4.4 5.5 i o =-50 m a 5.4 5.49 5.4 5.4 4.5 i o =-24 ma 3.86 3.76 3.7 v 5.5 i o =-24 ma 4.86 4.76 4.7 v ol low level output voltage 4.5 i o =50 m a 0.001 0.1 0.1 0.1 5.5 i o =50 m a 0.001 0.1 0.1 0.1 4.5 i o =24 ma 0.36 0.44 0.5 5.5 i o =24 ma 0.36 0.44 0.5 i i input leakage current 5.5 v i =v cc or gnd 0.1 1 1 m a i cct max i cc /input 5.5 v i =v cc - 2.1v 0.6 1.5 1.6 ma i cc quiescent supply current 5.5 v i =v cc or gnd 22040 m a i old dynamic output current (note 1, 2) 5.5 v old = 1.65 v max 75 50 ma i ohd v ohd = 3.85 v min -75 -50 ma symbol parameter test condition value unit v cc (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. t plh t phl propagation delay time 5.0 (*) 1.5 5.0 9.0 1.0 9.5 1.0 9.5 ns symbol parameter test condition value unit v cc (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. c in input capacitance 5.0 4 pf c pd power dissipation capacitance (note 1) 5.0 f in = 10mhz 37 pf
74act04 4/8 test circuit c l = 50pf or equivalent (includes jig and probe capacitance) r l =r 1 = 500 w or equivalent r t =z out of pulse generator (typically 50 w ) waveform: propagation delays (f=1mhz; 50% duty cycle)
74act04 5/8 dim. mm. inch min. typ max. min. typ. max. a1 0.51 0.020 b 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 d 20 0.787 e 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 f 7.1 0.280 i 5.1 0.201 l 3.3 0.130 z 1.27 2.54 0.050 0.100 plastic dip-14 mechanical data p001a
74act04 6/8 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.019 c1 45 (typ.) d 8.55 8.75 0.336 0.344 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 f 3.8 4.0 0.149 0.157 g 4.6 5.3 0.181 0.208 l 0.5 1.27 0.019 0.050 m 0.68 0.026 s8 (max.) so-14 mechanical data po13g
74act04 7/8 dim. mm. inch min. typ max. min. typ. max. a 1.2 0.047 a1 0.05 0.15 0.002 0.004 0.006 a2 0.8 1 1.05 0.031 0.039 0.041 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 d 4.9 5 5.1 0.193 0.197 0.201 e 6.2 6.4 6.6 0.244 0.252 0.260 e1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 bsc 0.0256 bsc k0 8 0 8 l 0.45 0.60 0.75 0.018 0.024 0.030 tssop14 mechanical data c e b a2 a e1 d 1 pin 1 identification a1 l k e 0080337d
74act04 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other righ ts of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this pub lication are subject to change without notice. thi s pub lication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authori zed for use as critical components in life suppo rt devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - swit zerland - united kingdom ? http://w ww.st.com


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